The entire machine utilizes a marble vibration-damping structure to ensure stability during the machining process.

The system employs brush or air-flotation full-board support to ensure substrate planarity.

The process allows selection between complete film removal and TCO retention.

The entire machine adopts a marble anti-vibration structure and utilizes a dual-drive switching mechanism to ensure fixed relative positioning of the substrate.

The system employs brush or air-flotation full-board support to ensure substrate levelness.

The edge cleaning process allows selection between complete film removal and TCO retention.

Low pressure diffusion is currently considered to be an effective way to improve the solar cells conversion efficiency;

It improves the molecular free path of the diffusion source and solves the problems of diffusion depth and uniformity;

This equipment is mainly used for the diffusion doping andoxidation annealing process of silicon wafers in the crystalline silicon solar cells manufacturing.

Achieved high-precision cutting processes for half-cell and multi-split technologies in high-efficiency module production.

In high-efficiency cell manufacturing, simultaneous half-cell and multi-split cutting with edge passivation is achieved. The edge passivation layer reduces carrier recombination at the edges, thereby improving cell conversion efficiency and enhancing the mechanical strength and weather resistance of the cells.

It is mainly used in laser pattern processing of solar screen of PI film or the steel mesh removalin the production of knotless screen.

ALD edge passivation equipment deposits uniform AlOₓ layers with atomic-level precision on complex cell edges, suppressing leakage currents and enhancing stability. Primarily used for TOPCon and BC cell edges, providing conformal and field-effect passivation to improve efficiency.

It is suitable for the semiconductor and photovoltaic fields.For TOPCon/BC cells in the photovoltaic filed, PE-POLY equipment prepares an ultra-thin tunneling oxide layer and a highly doped polycrystalline silicon layer on the cell's back.

The ultra-thin oxide layer can allow multi carrier electrons to tunnel into the polycrystalline silicon layer, while blocking minority hole recombination, so that electrons are collected by the metal during the lateral transmission in the polycrystalline silicon layer, ultimately greatly reducing the metal contact recombination current.

Deposit a layer of anti-reflective silicon nitride film (SixNy) with a thickness of about 75-140nm on the surface of the silicon wafer, and use the active H+ ions generated during the deposition process to passivate the surface and interior of the silicon wafer.

While reducing the light reflection, it also improves the minority carrier lifetime of silicon wafers, which is finally directly reflected in the conversion efficiency of crystalline silicon cells. It is mainlyused for the formationof SixNy on the front and back of PERC/TOPCon cells.

It is used for automatic loading and unloading of solar cell silicon wafer tubular diffusion/annealing equipment.