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Plasma Enhanced Chemical Vapor Deposition(PECVD)

HPE540-6A

Plasma Enhanced Chemical Vapor Deposition(PECVD)

Application Field:

Deposit a layer of anti-reflective silicon nitride film (SixNy) with a thickness of about 75-140nm on the surface of the silicon wafer, and use the active H+ ions generated during the deposition process to passivate the surface and interior of the silicon wafer.While reducing the light reflection, it also improves the minority carrier lifetime of silicon wafers, which is finally directly reflected in the conversion efficiency of crystalline silicon cells. It is mainlyused for the formationof SixNy on the front and back of PERC/TOPCon cells.

Product Features

  • 01
    Multi-temperature zone furnace made of special materials, with customized auxiliary heating, improving the uniformity of the thermal field and the coating, and reducing energy consumption by 5%;
  • 02
    Patented adaptive furnace door technology with torque balance mode: with a special furnace door design, the door sealing and stability are improved by 40%;
  • 03
    Patented parallel cooling technology for boat storage, improving cooling effect, shortening cooling time by more than 10%, and improving the cleanliness inside the operating table;
  • 04
    Patented graphite boat electrode technology: The electrode stems are designed with special materials to improve the stability of the front electrode, and the tail electrode is adjustable outside the furnace tube for easy maintenance. If no chipping, the frequency of failure occurrence per shift is less than 1 per machine;
  • 05
    Patented active cooling furnace technology, effectively improving temperature uniformity under large tube diameter, thereby improving coating uniformity

Basic Parameters

ItemTechnical Indicators
Film typeSiO、SiON 、SiN
Wafer size210mm (compatible with 182mm, 230mm)
Loading capacity768 pieces/batch (182mm), 616 pieces/batch (210mm), 500 pieces/batch (230mm)
Coating thickness uniformityIn wafer ≤4%, between wafer ≤4%, between batch≤3% (166/182 mm)
In wafer ≤5%, between wafer ≤5%, between batch≤3% (210/230 mm)
UP-TIME≥98%
Operating temperature range100~600°C
Temperature control9-point temperature control, internal and external dual-mode control
Heating modeAutomatic slope rise and fast constant temperature function
Cooling modeThe latest patented technology, 9-zone section control, active cooling of furnace body
Constant temperature zone accuracy and length±1°C/3200mm(500°C)
Single point temperature stability<±1°C/4h(500°C)
Heating timeRT → 450°C≤30min
Temperature controlDual-mode precision control
System ultimate vacuum<3Pa
System leak rateAfter the pump is stopped and the valve is closed, the pressure rise rate is < 1 Pa/min.
Pressure control modeFast-adjustment full-automation closed-loop  
Process control modeFull automation control of process, multiple safety interlock alarms
Human-machine interactive interfaceLCD display, touch screen operation, process editing, online monitoring, authority management, team management, CRRU 
MES/CCRMAvailable