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HDS430-6A
Low Pressure Diffusion System
Application Field:
Low pressure diffusion is currently considered to be an effective way to improve the solar cells conversion efficiency.Low pressure diffusion/oxidation annealing improves the molecular free path of the diffusion source and solves the problems of diffusion depth and uniformity. Compared with atmospheric pressure diffusion, it has some significant advantages, such as high productivity, high square resistance,
process repeatability, low resource consumption , cleanliness and environmental protection, etc.
This equipment is mainly used for the diffusion doping andoxidation annealing process of silicon wafers in the crystalline silicon solar cells manufacturing.
This equipment is mainly used for the diffusion doping andoxidation annealing process of silicon wafers in the crystalline silicon solar cells manufacturing.
Product Features
- Mature high-capacity technology, loading and unloading system: a balanced and symmetrical design is adopted to enhance stability;
- Rapid-cooling furnace body: the latest patented technology allows the temperatureof the furnace body to quickly drop to the required one, increases the cooling rate by more than 25%, and significantly improves the temperature uniformity;
- Exhaust gas is collected by high-efficiency water-cooled condenser to ensure stable and reliable operation and super long maintenance period of pipes, valves, filters and diaphragm pumps;
- Stable anti-interference source pipeline design reduces square resistance fluctuations caused by environmental disturbances;
- MES/CCRM system with complete architecture and outstanding performance.
Basic Parameters
| Item | Technical Indicators |
|---|---|
| Process mode | Soft landing closed-tube low pressure diffusion |
| Effective inner diameter of reaction tube | Ø430mm |
| Silicon wafer size | 182~230mm |
| Loading capacity | 1680-2880 pieces/batch@182mm (slot spacing 2.72mm),2200 pieces/batch@210mm (slot spacing 3.15mm) |
| Square resistance and uniformity | In wafer≤5% Between wafer ≤4% Between batch ≤3% (166/182mm 160Ω); In wafer≤6% Between wafer ≤5% Between batch ≤4% (210/230mm 160Ω) |
| Heating temperature | Rt →1250°C |
| Operating temperature | 400~1100°C |
| Emperature control | 6-point temperature control, internal and external dual-mode control |
| Heating mode | Automatic slope rise and fast constant temperature function |
| Cooling mode | The latest patented technology, 6-zone section control, active cooling of furnace body |
| Constant temperature zone accuracy and length | ≤±0.5℃/2500mm（800~1100℃）/≤±1℃/2500mm（600~800℃） |
| Single point temperature stability | ≤±0.5℃/4h（880℃） |
| Boat feeding mode | Using SiC cantilever boat to automatically feed wafer in horizontal direction, Boat speed 20~1500mm/min continuously adjustable, positioning precision ≤±1mm |
| System ultimate vacuum | 20mbar |
| System leak rate | After the pump is stopped and the valve is closed, the pressure rise rate is < 2 mbar /min |
| Pressure control mode | Closed-loop full-automation |
| Process control mode | Full automation, PLC+IPC, touch screen operation |
| Human-machine interactive interface | LCD display, touch screen operation, process editing, online monitoring, authority management, team management, CRRU |
| MES | Optional |
