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HLP480-6A
LPCVD Coating Machine
Application Field:
It is suitable for the semiconductor and photovoltaic fields.
For TOPCon/BC cells in the photovoltaic filed, PE-POLY
equipment prepares an ultra-thin tunneling oxide layer and
a highly doped polycrystalline silicon layer on the cell's back.
The ultra-thin oxide layer can allow multi carrier electrons to
tunnel into the polycrystalline silicon layer, while blocking
minority hole recombination, so that electrons are collected by
the metal during the lateral transmission in the polycrystalline silicon layer,
ultimately greatly reducing the metal contact recombination current.
Product Features
- Mature high-capacity technology, dual-mode temperature control technology, and thin-film silicon protection technology;
- Various coating technologies: multi-layer composite film, polysilicon doping technology;
- By using vertical loading method (similar to PE), the silicon wafer is not easy to bend, posing small obstruction on airflow, and improving gas utilization efficiency and coating uniformity;
- The unique process gas intake design (uniform gas intake from ring-shaped furnace mouth + gas intake from tail furnace spray tube) is adopted to ensure the uniformity of the gas field.
- With the cantilever propeller double furnace doors, the propeller does not need to be withdrawn during the process, shortening the process time; The quartz tube does not come into contact with the boat, reducing the impact of the boat on the quartz tube;
- Rapid adaptive pressure closed-loop control technology;
- Loading and unloading boat anti-collision technology
- Integrated industrial computer + modularized process control software;
- Comprehensive power failure safety treatment and flange water abnormal protection.
Basic Parameters
| Item | Technical Specifications |
|---|---|
| Film type | SiQx, i/d-Poly-Si |
| Wafer size | Vertical loading: 2880 pieces/batch (182mm),2200 pieces/batch (210mm) |
| Film thickness uniformity | SiOx uniformity: thickness: 1-3nm adjustable, precision :0.1nm, test SiOx thickness with polished wafer Poly uniformity: thickness: 50-200nm adjustable, precision 1nm, test poly thickness with polished wafer;In wafer: ≤4%, between wafer ≤4%, between batch ≤3% (>100nm) |
| UP-TIME | ≥95% |
| Operating temperature range | 400-750°C |
| Temperature control | 6-point temperature control, internal and external dual-mode control |
| Heating mode | Automatic slope rise and fast constant temperature function |
| Cooling mode | The latest patented technology, 6- zone section control, active cooling of furnace body |
| Constant temperature zone accuracy and length | ±1℃/2800mm(550-700℃) |
| Single point temperature stability | 1±℃/6H |
| Heating time | Rt→750℃≤45min |
| Cooling rate | ≥5℃/min |
| Temperature control | Dual-mode precision control |
| System ultimate vacuum | ≤10mTorr |
| System leak rate | ≤10mTorr/min |
| Pressure control mode | Fast-adjustment full-automation closed-loop |
| Process control mode | Full automation control of process, multiple safety interlock alarms |
| Human-machine interactive interface | LCD display, touch screen operation, process editing, online monitoring,authority management, team management, CRRU |
| MES/CCRM | Available |
