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Atomic Layer Deposition

HPAT260A

Atomic Layer Deposition

Application Field:

The independently developed and designed high-capacity tubular ALD coating machine provides ultra-thin and high-quality dielectric films such as SnOx, AlOx, NiOx, and ZnOx for the manufacturing of high-efficiency solar cells. It cooperates with automation to achieve stable and reliable operation.

Product Features

  • 01
    The optimized spray plate and the chamber space improves the uniformity of the flow field, achieves ultra-large production capacity, and enhances maintainability
  • 02
    The spare parts are easy to change and maintain
  • 03
    Both the inner and outer chambers are equipped with sealing rings to prevent situations where the inner chambers cannot be tightly sealed
  • 04
    Pull-out partitioned heating plate design for easy maintenance
  • 05
    Optimized design of flow field space to reduce TMA loss and process time

Basic Parameters

ItemTechnical Indicators
Silicon wafer size (μm)182-230
Film typeAl2O3、SnOx、SiOx、NiOx 、 ZnOx
Film thickness1-10nm controllable
Film uniformityIn wafer:≤4%, between wafer:≤4%, between batch:≤3%
CoatingDouble-insert single-side coating
Uptime≥ 98%
Chipping rate (without auto loadingunloading)≤ 0.02%
Reaction chamberDouble chambers (internal and external)
Loading methodHorizontal chamber
Boat handling methodThe process transfer device remains in the chamber
Loading capacity

182mm: 3360 pcs/chamber, double boats
210mm: 2880 pcs/chamber, double boats

Ultimate vacuum≤ 0.08 Torr (~10 pa)
Process pressure0.5-10 Torr
Air tightness≤ 1x10-7pa.m3/s
TMA air supply methodN2 source-carrying/vapor
Pump speed specification≥1820m3/h+ISO160
Process temperature150-300℃±1℃
Number of warm zone3
Cooling water2-4 kgf/cm2
Equipment size L*W (Main body includes pump and ozone machine)L8540*W4430*H2450 (mm)
N2 demand5N (The machine provides a 9N purifier)
Power supply3-phase 5-wire system 380V±5%, 50Hz±1Hz;